ED News Staff
|
ED Online ID #19693 |
September 10, 2008
A new gallium nitride (GaN)-based power device technology platform can provide customers with improvements in key application-specific figures of merit of up to a factor of 10, compared to state-of-the-art silicon-based technology platforms, according to International Rectifier Corp. Based on IR’s proprietary GaN-on-silicon epitaxial technology, the platform can increase performance and cut energy consumption in end applications in markets such as computing and communications, automotive, and appliances.
IR will introduce the GaN-based power device technology platform at a number of key industry events over the next two weeks including the Digital Power Forum ‘08 in San Francisco, from September 15-17; the Embedded Power Conference ‘08 in San Jose, from September 17-18; and the International Workshop on Power Supply on A Chip in Cork, Ireland, from September 22-24. Prototypes of several new products will be available to leading OEM customers at the Electronica tradeshow in Munich, Germany, Nov. 11-14.
Please refresh the page if you have trouble reading this text.
Search Electronic Design
Email Newsletter
Sponsored By:
The Find Power Products monthly newsletter brings you the most important new developments within the world of power design. The newsletter includes exerpts from industry leader Sam Davis's exclusive blog, as well as overviews of the latest new products.
Enter Email to Subscribe
Web Seminar
Sponsored By:
Title: Exploring How Good GUIs Drive Adoption in the Digital Power Management Space
Reprints
