EE Product News

5 GHz SiGe Transistors Lower Noise And Current Consumption

Debuting as the market’s first 5 GHz NPN silicon-germanium (SiGe) transistors, the NESG2021M05, NESG2031M05 are designed for use as LNA devices in WLAN, cordless phones, and short-range wireless applications. Operating on 2V, the NESG-2021M05 draws 3 mA and provides a noise figure of 0.9 dB at 2 GHz and 1.3 dB at 5.2 GHz. Associated gain is 18 dB and 11 dB at 2 GHz and 5.2 GHz, respectively. Also operating on 2V, the NESG-2031M05 draws 5 mA and exhibits a noise figure of 0.8 dB at 2 GHz and 1.3 dB at 5.2 GHz. Associated gain at 2 Ghz is 17 dB and 10 dB at 5.2 GHz. Available in M05 packages measuring 2 mm x 1.25 mm, prices for the NESG2021 and NESG2031 are $0.35 and $0.37, respectively, each/ 100,000. CALIFORNIA EASTERN LABORATORIES, Santa Clara, CA. (408) 988-3500.

Company: CALIFORNIA EASTERN LABORATORIES

Product URL: Click here for more information

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