Two new devices have been qualified on 6-in. wafers for the PBC4 0.5-µm biCMOS-DMOS (BCD) process. The first is a high-power driver. The n-channel medium voltage DMOS large-angle-body (MDL) device features a specific on-resistance (RSP) of 25 Ω mm2, a 1.3-µm gate length, a 2.0-V VT, and a 13.2-V VMAX. The second device is a platinum Schottky diode. For pricing, contact the company.