Electronic Design

BCD Process Unveils Devices That Lower Die Cost And Size

Two new devices have been qualified on 6-in. wafers for the PBC4 0.5-µm biCMOS-DMOS (BCD) process. The first is a high-power driver. The n-channel medium voltage DMOS large-angle-body (MDL) device features a specific on-resistance (RSP) of 25 Ω mm2, a 1.3-µm gate length, a 2.0-V VT, and a 13.2-V VMAX. The second device is a platinum Schottky diode. For pricing, contact the company.

PolarFab
www.polarfab.com

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