At 10 GHz, the firm's HBT30 Series SiGe transistors exhibit typical residual phase noise of -142 dBc/Hz at 100 Hz and -160 dBc/Hz at 10 kHz offsets. The devices' low phase noise is a boon to designers of WLAN, 3G, W-CDMA, LMDS, point-to-point radio, satellite, cable modem and fiber-optic systems in their quest to achieve high data transfer rates.Nominally rated at 5, 10 or 20 mA, the transistors provide maximum output power of +1, +7 or +13 dBm, respectively. The devices' power-added efficiency is greater than 50% when operated as an amplifier. Their silicon germanium structure provides high thermal conductivity and therefore lower junction temperatures. They're capable of operating from single supply voltages as low as 1V. Versions are offered in die form and in SC-70 (SOT-343) and Micro-X packages.
Company: SIGE MICROSYSTEMS INC.
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