Electronic Design
Breakthrough Package Extends MOSFET Efficiency

Breakthrough Package Extends MOSFET Efficiency

For boosting the power density of MDmesh V power MOSFETs, the company’s latest surface-mount power package measures 1 mm high and houses the industry-standard TO-220 die size within a leadless outline measuring 8 mm x 8 mm. It features an exposed metal drain pad for efficient removal of heat. According to the company, the compact form factor and high thermal performance, combined with a low on resistance per die area of the MDmesh V technology, maximizes power density and reliability to save PCB space. For more details, call STMICROELECTRONICS, Lexington, MA. (888) 787-3550.

 

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