The CMXDM7002A dual N-channel, enhancement-mode DMOS FET is said to have improved specifications compared to industry-standard 2N7002 devices. Housed in a surface-mount, SOT-26 package, the device provides a maximum VDS(ON) of 1V. Manufactured using a N-channel DMOS process, the FET is suitable for motor control, high-speed pulsed amplifier, and general-purpose line-driver applications. In addition, the device offers a space savings of over 50% compared to using two individual SOT-23 devices. Packaged in bulk quantities or on tape-and-reels, miniature FET is priced at $0.26 each/3,000. CENTRAL SEMICONDUCTOR CORP., Hauppauge, NY. (631) 435-1110.
Company: CENTRAL SEMICONDUCTOR CORP.
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