Electronic Design

Gen III Power MOSFETs Raze On Resistance

Representing one of three devices in Vishay Intertechnology’s latest MOSFET offerings, the SiR440DP features a maximum on resistance of 2.0 mΩ at a 4.5-V gate drive and 1.55 mΩ at a 10-V gate drive, which the company calls the lowest available for such a device. Figure of merit is 87 at 4.5 V. The 20-V N-channel device can serve as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications. Also in the mix, the 20-V SiR866DP and SiR890DP N-channel power MOSFETs offer, respectively, on-resistances at 4.5 V of 2.5 mΩ and 4 mΩ, and 1.9 mΩ and 2.9 mΩ at 10 V with typical gate charges of 35.3 and 20 nC, also respectively. All three MOSFETs come in PowerPAK SO-8 packages. Pricing starts at $0.70 each/100,000.

Vishay Intertechnology Inc.

www.vishay.com/doc?68761

www.vishay.com/doc?68751

www.vishay.com/doc?68644

Hide comments

Comments

  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.
Publish