A unique trench process technology has made its way into the market. On average, it delivers a 40% improvement in on-resistance when compared to other trench processes on the market today. This is true across all of the MOSFET package offerings that are currently available.
Its developer, ON Semiconductor, is now working to introduce a complete portfolio of P-channel and N-channel MOSFETs based on this innovative trench technology. The company's goal is to do so by the end of the year, with initial devices to be released by the end of this quarter. Focus applications will include load management, circuit charging, battery protection, and dc-dc conversion in portable and wireless products. High-performance, trench-based devices for computing and automotive applications are expected to follow a short time after the initial release.
When combined with improved cell geometry, the trench technology will guarantee products that deliver best-in-class on-resistance characteristics. This, in turn, will mean an extension of battery life, higher power-conversion characteristics, and higher thermal efficiencies.
In particular, the new trench technology realizes a very high channel density. At the same time, it delivers excellent on-resistance performance for a given package footprint. For example, the soon to be available 8-V P-channel and 20-V P-channel products in a ChipFET package (1.8 × 3.3 mm) demonstrate an on-resistance of 19 mOhms and 21 mOhms, respectively. On average, these values—at a gate voltage of 4.5 V—reflect a 40% improvement as compared to currently available products in packages with the same footprint. This same proportional improvement in on-resistance is also anticipated in the Micro-8LL (3.3 × 3.3 mm), TSOP-6 (3 × 3 mm), and SC-88 (2.0 × 2.0 mm) packaged MOSFETs that ON Semiconductor will be offering.
General sampling of initial trench-MOSFET devices will begin this month.
ON Semiconductor4516 E. Rocky Slope Dr., Phoenix, AZ 85044; (480) 763-0968, www.onsemi.com.