Operating with frequencies from UHF to 2.5 GHz, the NE552R479A n-channel, LDMOS FET does not require a negative power supply voltage and supports battery voltages from 3V to 8V. Suitable applications include the transmitter output stage in cell phones, two-way radios, wireless LANs, and fixed wireless transceivers. Measured at 2.44 GHz at 5V, POUT= +27 dBm, GL= 11.5 dB, and output IP3= +36 dBm. The FET, manufactured using 0.6 µm WSi gate NEWMOS technology, comes in a surface-mount package measuring 5.7 mm x 5.7 mm x 0.9 mm with a thermal resistance of 10°C/W maximum. Price is $2 each/10,000. CALIFORNIA EASTERN LABORATORIES, Santa Clara, CA. (408) 988-3500.
Company: CALIFORNIA EASTERN LABORATORIES
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