Silicon’s 20th Century dominance in power electronics applications has been eroding for some time now. As engineers extract dwindling amounts of additional performance from silicon ICs, they are looking to wide-bandgap (WBG) materials to develop next-generation power electronics. Examples include silicon carbide (SiC) and gallium nitride (GaN). Materials that have a wide bandgap are inherently applicable in high-power electronics, as they have a higher breakdown voltage and are able to
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