Electronic Design
MOSFETS Lower On Resistance, Improve Gate Charge

MOSFETS Lower On Resistance, Improve Gate Charge

The SiHP12N50C-E3, SiHF12N50C-E3, and SiHB12N50C-E3 500V, 12A n-channel power MOSFETs feature a 0.555? on-resistance at a 10V gate drive and a gate charge of 48 nC. The MOSFETs employ Planar Cell technology, which minimizes on-state resistance and withstands pulses in avalanche and commutation mode. The devices are compliant to RoHS 2002/95/EC and 100 % avalanche tested. Pricing starts at $0.65 each in volume. VISHAY INTERTECHNOLOGY, INC., Malvern, PA. (619) 336-0860.

 

TAGS: MOSFETs
Hide comments

Comments

  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.
Publish