Overcoming Challenges in GaN Power Amplifier Implementations

Overcoming Challenges in GaN Power Amplifier Implementations

Learn about the benefits of gallium nitride (GaN) over gallium arsenide (GaAs).

Date: Tuesday, October 31, 2017
Time: 11:00 AM ET to 4:00 PM CET
Duration: 45 minutes

Co-sponsored by Analog Devices and Richardson RFPD. We will introduce some of the benefits of gallium nitride (GaN) over gallium arsenide (GaAs) IC technologies and explore some of the challenges present in moving from GaAs to GaN power amplifier implementations for die, surface mount, and mechanical attach. Challenges will include assembly, thermal management, and DC bias considerations. We will show how ADI's solutions can be used to overcome those challenges.

During this webcast you will learn:

  • Benefits of GaN over GaAs
  • Considerations in moving from GaAs to GaN with assembly, thermal management, and DC bias optimization

Who should attend: 

Engineers interested in improving the performance of GaN power amplifier implementations in areas such as 5G, radar, satellite communications, medical imaging, downhole drilling and more.

Presenter:

Sean McBride, Senior Applications Engineer, Analog Devices