Electronic Design
Package Enables Performance Boost For High-Frequency Power Devices

Package Enables Performance Boost For High-Frequency Power Devices

The company’s plastic air-cavity package for next-generation RF power transistors replaces conventional ceramic, enabling higher gain and output with weight and bill-of-materials savings. The air-cavity packages provide high electrical isolation for silicon die and are suitable for high-frequency, high-power applications. STAC plastic packages achieve a junction-to-case thermal resistance of 0.28° C/W, allegedly 20% better than ceramic packages. Additionally, the mean time to failure for the package is up to four-times longer. Three devices using the technology are available for applications up to 250 MHz. The 100V STAC3932B/F in bolt-down or flangeless configurations has 26dB linear gain and can sustain pulse-power output up to 900W. The STAC2932B/F and STAC2942B/F are 50V devices having linear gain and continuous rated output power of 20dB/400W and 21dB/450W, respectively. The devices achieve nominal efficiency from 68% to 75%. Pricing starts at $48 each/25,000 for the STAC2932B/F. STMICROELECTRONICS, Lexington, MA. (888) 787-3550.

 

Hide comments

Comments

  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.
Publish