EE Product News

Power MOSFET Slashes On-Resistance

In comparison to similar devices in standard TSOP-8 packages, the AAT7357 20V, low-threshold dual P-channel power MOSFET claims to reduce on-resistance in the realm of 50%. The device measures 3 mm x 2.85 mm in a TSOPJW-8 and specifies a typical drain-source on-resistance of 30 mΩ at a gate-threshold voltage of -4.5V. On-resistance is 49 mΩ at -2.5V. Other features include a maximum power dissipation of 1.6W at 25°C, continuous drain current of 5A at 25°C, and a drain-to-source breakdown voltage of -20V. Price is $0.68 each/1,000. ADVANCED ANALOGIC TECHNOLOGIES INC., Sunnyvale, CA. (408) 737-4600.

Company: ADVANCED ANALOGIC TECHNOLOGIES INC.

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