EE Product News

Power MOSFETs Improve Specs

Enlisting second-generation TrenchFET technology, the 30V n-channel Si4320DY and Si7356DP power MOSFETs are based on a 300-million-cells per square inch platform that yields an on-resistance of 12 m?/mm². This is said to yield a 30% improvement over the company's previous generation devices. Of note, the Si4320DY in a Little Foot SO-8 and the Si7356DP in a PowerPAK SO-8 package exhibit on-resistances of 3 m? at 10V and 4 m? at 4.5V. Prices start at $0.58 each/100,000. VISHAY INTERTECHNOLOGY INC., Malvern, PA. (610) 644-1300.

Company: VISHAY INTERTECHNOLOGY INC.

Product URL: Click here for more information

Hide comments

Comments

  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.
Publish