Though budgets keep getting tighter, handset features continue to multiply. In response to this trend, designers are calling for components with more functionality and flexibility. The RF Components Division of Raytheon Co. has answered this call with the RMPA1958-99. This high-efficiency power-amplifier module was designed for GSM/GPRS quad-band applications.
The module has an overall frequency range of 824 to 1910 MHz. By using the company's InGaP MMIC technology with a CMOS control circuit in an integrated design, it affords greater flexibility and user convenience. The high-performance InGaP GaAs HBT process boasts an inherently low temperature sensitivity, easier manufacturability, and higher reliability.
Among the power amplifier's features are an internal 50-ohm input and output matching with internal DC blocking, as well as a leadless chip-carrier module with on-board band select and output power control. The power amplifier thus reduces handset design complexity while minimizing loss.
The RMPA1958-99 power amplifier is designed to operate at a supply voltage of 3.5 VDC. It delivers an output power of 35 dBm for GSM applications and 32.5 and 31.5 dBm, respectively, for DCS and PCS. The RMPA1958-99 power-added efficiency is 55% for US Cell/GSM and 50% for DCS/PCS. The full range of output power control is set with a variable power-control voltage of 1.9 V max. The total leakage current at shutoff is in the microamp range.
By handset type, the device's operating frequency ranges are 824-849 MHz for US Cell; 880-915 MHz for GSM; 1710-1785 MHz for DCS; and 1850-1910 MHz for PCS. To maximize handset board space, the unit comes packaged in an 11.6-×-9.1-×-1.6-mm leadless chip-carrier module.
Budgetary 1KU pricing for the RMPA1958-99 is $4.48. Delivery is stock.
Raytheon RF Components
362 Lowell St., Andover, MA 01810; (978) 684-8900, www.raytheonrf.com.