Electronic Design

RF Power Amplifier Serves Quad Cellular Bands For 2.5G Handsets

Combining high-impedance integrated power-amplifier (HIIPA) packaging with enhancement-mode (E-mode) gallium-arsenide (GaAs) wafer processing, Motorola's Semiconductor Products Sector has crafted a wideband 50-Ù RF power-amplifier module for 2.5G cellular handsets. The MMM5062 is designed to handle quad frequency bands of GSM/GPRS handheld radios.

By adding passive components onto the pc board that houses the integrated power-amplifier chip, the MMM5062 provides a 50-Ù I/O solution in a 7- by 7-mm package with a profile of less than 1.11 mm. The power amplifier needs no external components. To realize such a miniature package, the capacitors are integrated on the power-amplifier die, and the inductors are implemented using wire bonds of variable lengths.

To offer a single-supply solution, the MMM5062 uses GaAs-derived E-mode heterostructure insulated-gate FETs (HIGFETs). To meet the output power and noise requirements of GSM, DCS, and PCS cellular channels, it implements a three-stage amplifier design. Typical output power and power-added efficiency specifications include 35.5 dBm and 50% for GSM850, 35.2 dBm and 53% for GSM900, 33.8 dBm and 44% for DCS, and 34 dBm and 43% for PCS. Optimized for open-loop power control, its single-supply voltage range is 2.7 to 5.5 V.

Production is expected by the middle of the third quarter. In 10,000-piece lots, the MMM5062 costs $4.00 each.

Motorola SPS, www.motorola.com; (480) 413-3840.

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