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RF Transistors Tone Down The Noise

Based on Silicon-Germanium Carbon (SiGe:C) process technology, the BFP740 HBT family of RF transistors targets a wide range of RF and wireless applications, such as wireless LANs. The transistors, which have a typical transition frequency of 42 GHz, feature noise figure levels of just 0.5 dB at 1.8 GHz and 0.75 dB at 6 GHz, claimed as the industry's lowest for silicon-based discrete transistors. Other specs include a typical Gms (maximum stable power gain) of 28 dB at 1.8 GHz and typical Gma (maximum available power gain) of 19 dB at 6 GHz. According to the company, these silicon-based performance levels could previously be attained only by using more expensive technologies based on gallium arsenide. The BFP740 HBT series is in volume production and available in standard SOT343, flatlead TSFP-4 and ultra small 3-pin leadless TSLP-3 packages. The latter is only 1.0 mm x 0.6 mm x 0.4 mm in size. INFINEON TECHNOLOGIES CORP., San Jose, CA. (408) 501-6000.


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