EE Product News

SiGe Transistors Reduce Power Consumption

A family of silicon germanium (SiGe) heterojunction bipolar transistors (HBT) are designed to reduce power consumption and improve reliability of full-featured portable communications devices. The line-up of SiGe-based RFICs will initially include the MT4S100U, a high-frequency transistor, and the MT4S101U, a high-power gain transistor. The MT4S100U maintains a VCEO of 3.5V and achieves a noise level of 0.7 dB at 2 GHz. The MT4S101U features an insertion gain of 17.5 dB at 20 mA. Both come in a 4-pin surface mount package. Sample pricing is $0.30 each. TOSHIBA AMERICA ELECTRONIC COMPONENTS INC., Irvine, CA. (949) 455-2000.

Company: TOSHIBA AMERICA ELECTRONIC COMPONENTS INC. (TAEC)

Product URL: Click here for more information

Hide comments

Comments

  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.
Publish