With a fT of 5 GHz and an Icmax of 100 mA, the NE851M13 silicon transistor is optimized for use in 1 to 2 GHz VCO applications. The transistor delivers a low noise figure: 1.9 dB typ. at 1V/10 mA, f = 2 GHz, with the associated gain at these specs being 9 dB typ. It also offers high immunity to pushing effects, as well as low voltage/low current (1V/10 mA typ.) operation, making the transistor a good choice for handheld battery-operated products, such as cell phones and pagers.The NE851M13 transistor is housed in an ultraminiature package having overall dimensions of just 1.0 x 0.5 mm and a 0.5-mm profile, with the deviceÕs leads recessed into the package to further reduce the size of its footprint. Its Òflat leadÓ design also helps reduce inductance. Price: $0.16 each/100,000. For more details, call Joe Grimm at CALIFORNIA EASTERN LABORATORIES, Santa Clara, CA. (408) 988-3500.
Company: CALIFORNIA EASTERN LABORATORIES
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