Expanding the company’s S-band LDMOS portfolio, the ILD3135M180 transistor suits S-Band radar applications operating over the 3.1 GHz to 3.5 GHz instantaneous frequency band. Specifying a 300-ms pulse width and a 10% duty cycle under pulsed conditions, the device delivers over 200W of peak output power with an 11-dB gain. The single-ended broadband test fixture includes a temperature-compensated bias network and operates in Class AB mode. Integra Technologies Inc., El Segundo, CA. (310) 606-0855.