The SE5120 WCDMA power amplifier promises users a lower system bill of materials (BOM) via its high level of integration. Operating in the 1.92 GHz to 1.98 GHz band, the device boasts of being the first cellular amplifier produced that employs germanium BiCMOS process technology licensed from IBM, which is said to yield power amplifiers with the performance level of GaAs devices at the cost of silicon. Employing the company's unique process technology, the device integrates the power amplifier, a regulator, matching circuitry, and an optional power detector into an eight-pin QFN package measuring 3 mm x 3 mm x 0.9 mm. Other features include a peak output power of +28 dBm, linearity of –38 dBc, and a power-added efficiency exceeding 40%. Price is $1.50 each/100,000. SIGE SEMICONDUCTOR, Ontario, Canada. (613) 820-9244.
Company: SIGE SEMICONDUCTOR
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