Advances in wide bandgap (WBG) power devices are enabling silicon-carbide (SiC) and gallium-nitride (GaN) devices that can operate at higher voltages and temperatures than conventional semiconductor devices. Also, they can switch at faster speeds with lower switching losses. New SiC and GaN solutions and developments are especially taking hold in three fields: data centers, wireless charging, and energy harvesting. Each of these application areas are driving the development of WBG power
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