STripFETs Feature Reduced On Resistance

Sept. 1, 2000
Built with the company's strip layout technique, the STV160-NF02L (20V) and the STV160-NF03L (30V) STripFETs have on-resistance values as low as 2.5 milliohms. The devices are housed in PowerSO-10 packages and are claimed to be particularly

Built with the company's strip layout technique, the STV160-NF02L (20V) and the STV160-NF03L (30V) STripFETs have on-resistance values as low as 2.5 milliohms. The devices are housed in PowerSO-10 packages and are claimed to be particularly well-suited for high-efficiency dc/dc converters in telecom and computer applications.
These second-generation STrip-FETs are part of the company's NF series, which offers a 60% increase in channel perimeter compared to the first generation. Comprised of over 70 devices, the NF series is available in a variety of through-hole and surface-mount packages with breakdown voltages from 20V to 100V and current ratings from 2A to 160A.
Additional applications include use in motherboards, mobile phones, and laptop energy-management systems. Prices are $3.75 each/10,000 for the STV160-NF02L and $3.90 each for the STV160NF03L.

Company: STMICROELECTRONICS INC.

Product URL: Click here for more information

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