The TGA2578 30 W GaN power amplifier from TriQuint Semiconductor offers system designers reduced combining in circuit paths, and the resulting improved efficiencies. Fabricated on TriQuint's 0.25 µm GaN on SiC process, the wideband power amplifier operates from 2 to 6 GHz, achieving 30 W saturated output power with 40% power added efficiency and 27 dB small signal gain. The power amplifier is produced using TriQuint’s TQGaN25 process offering 28 V operation at 400 mA, and is available as 6.4 x 5 x 0.1 mm DIE, fully matched to 50 Ω with integrated dc blocking caps on the I/O ports. ITAR controlled, the power amplifier is applicable for electronic warfare, EMC amplifiers and test instrumentation. Lead-free and RoHS compliant, the device is also 100% dc and RF tested on-wafer to ensure compliance to power and PAE specifications. Design and sales support for the TGA2578 GaN wideband power amplifier are provided by distributor, RFMW Ltd.
30 W GaN Power Amplifier Covers 2-6 GHz With 40% PAE
GaN wideband power amplifier operates from 2 to 6 GHz, achieving 30 W saturated output power with 40% PAE and 27 dB small signal gain.