Electronic Design
50 V LDMOS RF Power Transistors Built For Extreme Ruggedness

50 V LDMOS RF Power Transistors Built For Extreme Ruggedness

50 V LDMOS RF power transistors replace VDMOS transistors and eliminate hazardous substances.

Leading off NXP’s new XR series 50 V LDMOS RF power transistors, the 650 W BLF184XR(S) and the 1400 W BLF188XR(S) are specifically designed for RF energy applications in the ISM frequency bands, and also enable high efficiency FM and VHF-TV broadcast transmitters with superior correctable linearity. With improved Class-C operation due to new dual-sided ESD diode structure with larger negative voltage range, the LDMOS transistors deliver stability and ‘eXtremely Rugged’ high power up to 1400 W under the most severe load mismatch conditions (VSWR greater than 65:1 at P3 dB). Meant to replace VDMOS and eliminate hazardous substances, the compact LDMOS devices are ideally suited for demanding (kW) professional smart RF energy applications in the ISM frequency bands, from igniting plasmas and lasers to powering synchrotrons and MRIs. They also give a real power and efficiency performance boost to terrestrial broadcasting and provide superior correctable linear performance and pre-distortion characteristics for IBOC Digital Radio, VHF-TV, and other linear applications. The BLF18xXR(S) XR series 50 V LDMOS RF power transistors are available now and application examples are provided.

NXP SEMICONDUCTORS

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