Bluetooth Systems Get Highly Integrated RF Front-End IC

Aug. 1, 2000
Made using a SiGe process, the T7024 RF front-end IC was developed for use in the radio portion of Bluetooth systems. It integrates a low-noise (2.3 dB typ.) amplifier and a power amplifier that delivers +23 dBm at 3V and a gain of 25 dB. The device,

Made using a SiGe process, the T7024 RF front-end IC was developed for use in the radio portion of Bluetooth systems. It integrates a low-noise (2.3 dB typ.) amplifier and a power amplifier that delivers +23 dBm at 3V and a gain of 25 dB. The device, together with the firm's T2901 RF transceiver chip, Atmel's AT76C55X Bluetooth controller (baseband), and flash memory is said to provide all the ICs needed to comply with the 20-dBm Bluetooth spec.
The T7024 RF SiGe front-end chip consumes as little as 170 mA, with current consumption dropping to a mere 10 µA in the IC's standby mode. The device comes in a tiny, PSSO20 package and has a starting price of $2.10 each/10,000. A design kit is also available.

Company: TEMIC SEMICONDUCTORS

Product URL: Click here for more information

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