EE Product News

C-Band GaAs FETs Are Internally Matched

TIM5964-60SL 60W C-band GaAs FET has typical output power of 48 dBm at a frequency range of 5.9 to 6.4 GHz. Fabricated using a heterojunction field effect transistor (HFET) process, these devices have higher Schottky barrier height than GaAs MESFETs for improved gate breakdown voltage with reduced gate leakage current. The devices are optimized for solid-state amplifiers used in satellite earth station communication transmitters (SATCOM) and very small aperture terminals (VSAT). Uses also include wireless communications and point-to-point radio applications.

Company: TOSHIBA AMERICA ELECTRONIC COMPONENTS INC. (TAEC)

Product URL: Click here for more information

Hide comments

Comments

  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.
Publish