TIM5964-60SL 60W C-band GaAs FET has typical output power of 48 dBm at a frequency range of 5.9 to 6.4 GHz. Fabricated using a heterojunction field effect transistor (HFET) process, these devices have higher Schottky barrier height than GaAs MESFETs for improved gate breakdown voltage with reduced gate leakage current. The devices are optimized for solid-state amplifiers used in satellite earth station communication transmitters (SATCOM) and very small aperture terminals (VSAT). Uses also include wireless communications and point-to-point radio applications.
Company: TOSHIBA AMERICA ELECTRONIC COMPONENTS INC. (TAEC)
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