Employing standard 90-nm CMOS process technology, the company unveils the market's first millimeter-waveband power amplifier that operates at 77 GHz. The technology realizes CMOS radio frequency (CMOS RF) front-end circuitry that includes a PA, thereby enabling integration with baseband circuitry on a single chip. Via a unique modeling technology for transistors and passive components operating in the millimeter waveband and the development a short stub matching circuit integrated with the power-supply circuitry, the amplifier exhibits a signal loss to 0.4 dB. Operating at 77 GHz, it achieves an 8.5-dB gain and delivers 6.3 dBm of saturated output power. FUJITSU LABORATORIES LTD., Kanagawa, Japan. FUJITSU MICROELECTRONICS AMERICA INC., Sunnyvale, CA. (408) 737-5600.
Company: FUJITSU MICROELECTRONICS AMERICA INC.
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