CTT’s AGW-110-4760 and AGW-110-5056-P, introduce a new family of GaN-based solid-state power amplifiers operating in the 7.0 to 11.0 GHz frequency range for commercial, industrial and military microwave applications. Offering as much as 100 W of output power in a compact package, the new line is engineered specifically to meet the stringencies imposed by many multi-function system designs. As a traveling wave tube replacement, general purpose, wideband amplifier, the AGW-110-4760 provides a minimum CW output power of 50 W across the 7.0 to 11.0 GHz frequency range. Electrical specifications include 60 dB of Gain, and 47 dBm of CW Psat. With operation at 28 Vdc, quiescent current (without RF input) is approximately 6 A, rising to no more than 14 A at full saturated output. The AGW-110-5056-P provides up to 100 W of pulse power at selected 1 GHz segments of the X-Band. The amplifier specifications offer 56 dB of Gain, and 50 dBm of pulsed saturated power. In pulsed operation, at 30 Vdc, quiescent current is less than 6 A with no more than 16 A at pulse saturation. Coming in compact packages measuring 4.32˝ x 4.5˝ x 0.68˝, both amplifiers are also available in rack-mount configurations.
Compact, GaN-Based Power Amplifiers Designed For X-Band Apps
GaN-based solid-state power amplifiers offer up to 100 W of output power in a compact package.