EDGE QAM Amp Covers 20-dB Range

Nov. 9, 2011

The RFAM2790 EDGE QAM amplifier employs a GaAs pHEMT die and a GaAs MESFET die.

1 of Enlarge image

The RFAM2790 EDGE QAM amplifier employs a GaAs pHEMT die and a GaAs MESFET die. Features include a 20-dB range, variable attenuator, power enable, a nominal gain from 8 to 28 dB at 45 to 1,003 MHz, and operation from 12V supply. Pricing is $17.70 each/10,000. RF MICRO DEVICES INC., Greensboro, NC. (336) 664-1233.

Continue Reading

Solving the contact resistance challenge for 7nm and beyond CMOS

Flash Memory Takes Over

Sponsored Recommendations

TTI Transportation Resource Center

April 8, 2024

From sensors to vehicle electrification, from design to production, on-board and off-board a TTI Transportation Specialist will help you keep moving into the future. TTI has been...

Cornell Dubilier: Push EV Charging to Higher Productivity and Lower Recharge Times

April 8, 2024

Optimized for high efficiency power inverter/converter level 3 EV charging systems, CDE capacitors offer high capacitance values, low inductance (< 5 nH), high ripple current ...

TTI Hybrid & Electric Vehicles Line Card

April 8, 2024

Components for Infrastructure, Connectivity and On-board Systems TTI stocks the premier electrical components that hybrid and electric vehicle manufacturers and suppliers need...

Bourns: Automotive-Grade Components for the Rough Road Ahead

April 8, 2024

The electronics needed for transportation today is getting increasingly more demanding and sophisticated, requiring not only high quality components but those that interface well...