Housed in 3 x 3 ball-grid array (BGA) packages, the AP3 and AP4 GaAs FETs extend the performance of the company's products to higher frequencies and power levels. The AP3 FET features an output IP3 of 39 dBm and a P1dB of +22 dBm from 0.1 to 6 GHz. The AP4 has an output IP3 of 40 dBm and a P1dB of +27 dbm, also from 0.1 to 6 GHz.The new FETs are said to offer excellent performance for transmit line-ups, where high dynamic range is required. They are manufactured using a GaAs MESFET process and feature a mean-time to failure (MTTF) of greater than 100 years. The AP3 and AP4 FETs both are 100% RF and DC tested.
Company: WATKINS-JOHNSON COMPANY
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