Electronic Design
High Linearity, Active Bias LNA Ensure Cellular Performance

High Linearity, Active Bias LNA Ensure Cellular Performance

0.7 to 1.2 GHz single-die cascode, GaAs, pHEMT LNA for cellular infrastructure applications offers 0.51 dB noise figure, +39 dBm OIP3 linearity, 18 dB return loss and gain flatness in compact, no-lead plastic package.

Skyworks’ new SKY67111-396LF single-die cascode, GaAs, pHEMT low-noise amplifier designed for cellular infrastructure applications such as tower-mounted amplifiers, remote radio units, repeaters and base stations. Operating over the 0.7 to 1.2 GHz frequency range, the LNA offers a low noise figure and high linearity (+39 dBm OIP3), along with 18 dB return loss and gain flatness in a compact, no-lead plastic package. On-die active bias design ensures consistent performance and enables unconditional stability with a 5 V supply. The rugged cascode design achieves a 0.51 dB @ 0.9 GHz noise figure, high IIP3 performance (18.9 dBm @ 0.9 GHz), >20 dB gain, and the bias circuit allows the device current to be set independently from the Vdd supply. With its high linearity, the amplifier is also suited as a linear amplifier for transmitter applications. A standard evaluation board is available, and custom evaluation board schematic designs can be generated for application specific narrow band requirements such as improved gain flatness or higher linearity. Manufactured in a 2 x 2 mm, 8-pin DFN package, samples of the SKY67111-396LF LNA are available now. Pricing is dependent upon quantities.

SKYWORKS SOLUTIONS INC.

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