Electronic Design

High Ruggedness RF Power Transistors Designed For UHF TV

Higher power output across entire 470 – 806 MHz TV broadcast band gives designers the option of using fewer transistors to achieve target power.

Infineon’s three latest 50 V LDMOS transistors are designed specifically for use in UHF TV broadcast transmitters. A higher power output across the entire 470 – 806 MHz TV broadcast band gives amplifier designers the option of using fewer transistors to achieve target output power. The PTVA047002EV has a rated power output of 135 W average, with a DVB-T (8k OFDM) signal, and 17.5 dB gain. For a broadcast amplifier design of 12 kW, the increased power can eliminate up to 20 RF power transistors. The PTVA042502EC and PTVA042502FC transistors provide 55 W average output power and 18.5 dB gain with a DVB-T (8k OFDM) signal, suiting them for applications such as gap fillers. All 50V LDMOS transistors feature 26% at 500 MHz typical efficiency, low thermal resistance, capability of 10:1 VSWR, -6 V to 12 V gate source voltage range and integrated ESD protection. Engineering samples of the UHF TV broadcast power transistors are available now, with production planned this quarter for the open-cavity 248-style package PTVA042502EC (eared) and PTVA042502FC (earless), and in the first quarter of 2014 for the PTVA047002EV (open-cavity 275-style package with eared flange).

INFINEON TECHNOLOGIES AG

TAGS: Products
Hide comments

Comments

  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.
Publish