Aimed primarily for use in GSM1800 base stations, the company's three new RF power transistors use GOLDMOS technology and are claimed to provide excellent linearity and thermal stability. The 5-W PTF10107, 12-W PTF10053, and the 60-W PTF10153 provide a total, flat gain of 33.5 dB, which is claimed to be 3 dB higher for each device than its bipolar counterpart. The PTF10107 and PTF10053 measure 4 mm x 5 mm and the PTF10153 measures 20 mm x 34 mm including flanges. Ion implantation, nitride surface passivation and gold plating are claimed to result in excellent reliability and ruggedness for the three devices.
Company: ERICSSON INC. - Microelectronics
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