Renesas Electronics’ new NE3516S02 and NE3513M04 small signal GaAs FETs, specifically designed to meet the demanding requirements of X to Ku band low noise block downconverters for direct broadcast satellites, are being brought to market by CEL. Also suited for X to Ku band wireless communications, the general purpose GaAs FETs boast improved associated gain and noise figure performance over previous generation devices. Typical performance at 12 GHz with bias 2 V / 10 mA is 0.35 dB NF and 14 dB Ga (typically used for 1st stage) for the NE3516S02, and 0.45 dB NF and 13 dB Ga (typically for 2nd stage) for the NE3513M04. At the lower bias of 2 V / 6 mA, the NE3516S02 maintains an NF of 0.35 dB and a Ga of 13.5 dB, and the NE3513M04 maintains an NF of 0.50 dB and a Ga of 12 dB. Samples are available now and pricing for the NE3516S02 is $0.72 each/100 k and $0.52 each/100 k for the NE3513M04.
X - Ku Band Small Signal GaAs FETs Improve NF and Ga
Small signal GaAs FETs meet requirements of X to Ku band low noise block downconverters for direct broadcast satellites and wireless communications.