Alliance Memory is highlighting its latest high-speed CMOS synchronous DRAMs (SDRAMs) at electronica 2016 (booth A5.224). The company is also showcasing its offering of discontinued Micron Semiconductor 512-Mb SDRAMs and a variety of components for automotive applications.
The DDR SDRAMs on display include a new 1-Gb device with a fast clock rate of 166 MHz in the 66-pin TSOP package. Offered in 84-ball and 60-ball FBGA packages, highlighted DDR2 SDRAMs will feature fast clock rates of 400 MHz and data rates of 800 Mbps/pin. DDR3 SDRAMs on display will include new monolithic, low-voltage 8-Gb devices with extremely fast transfer rates of up to 1,600 Mbps/pin, clock rates of 800 MHz, and backwards-compatibility with +1.5-V power supplies to enable large memory subsystems.
The Micron Semiconductor SDRAMs featured are in the 54-pin TSOP II package with commercial (0 °C to +70 °C) and industrial (-40 °C to +85 °C) temperature ranges and operation from a single +3.3-V (±0.3 V) power supply. Lead (Pb)- and halogen-free, the MT48LC32M16A2P-75:C, MT48LC32M16A2P-75 IT:C, MT48LC64M8A2P-75:C, and MT48LC64M8A2P-75 IT:C are PC100- and PC133-compliant.
Alliance Memory is also highlighting a wide variety of components that provide an automotive temperature range of -40 °C to +105 °C. Featured ICs include 64-Mb, 128-Mb, and 256-Mb SDRAMs with clock rates of 166 MHz in 54-pin TSOP II and 54-ball FBGA packages; 64-Mb DDR SDRAMs with data rates of 400 Mbps/pin in the 66-pin TSOP II; 512-Mb and 1-Gb DDR2 SDRAMs in 84-ball and 60-ball FBGA packages with data rates of 800 Mbps/pin; and 1-Gb to 4-Gb DDR3 SDRAMs that feature data rates of 1600 Mbps/pin.