Electronic Design

Component Specifier: Discrete Semiconductors


TRANSISTORS
TYPE/Model Features P & A Source
MEDIUM-POWER
MOSFET
TPCP8402
Medium-power MOSFET in the company's new PS-8 ultra-thin eight-pin surface mount package; dual N-channel and P-channel device; PS-8 package has 2.75-W maximum power dissipation; 0.85-mm height; lead-free terminals $0.20 each; eight to 12 weeks Toshiba America Electronic Components (TAEC)
www.toshiba.com/taec/
(949) 455-2000
MOSFET/BIPOLAR
DPak packaged
Six low-saturation bipolar transistors and three low on-resistance MOSFETs offered in the DPak surface-mount package; package improves circuit efficiency and power capability; low thermal resistance enables cooler operation; 10-W power rating Starts at $0.35 each in 10,000-unit lots; four to six weeks Zetex Inc
www.zetex.com
(631) 360-2222
POWER MOSFET
FDC6000NZ
Dual N-channel MOSFET power switch; flip-chip in a leaded molded package; 0.8-mm maximum height; 9.0-mm2 maximum area; 1.6-W power dissipation; 7.3-A maximum steady-state current; designed for lithium-ion battery pack protection $0.66 each in 1000-unit lots; eight weeks Fairchild Semiconductor
www.fairchildsemi.com
(972) 910-8000
POWER MOSFET IRL1404ZS/IRL3705ZS/
IRLR2905Z/IRLZ44ZS/
IRLR024Z
Five logic-level trench power MOSFETs; can meet gate drive requirements as low as 4.5 V; designed for high-power automotive applications; compatible with typical microprocessor supply voltages; Q101-qualified Ranges from $0.50 to $1.60 each in 10,000-unit lots; stock International Rectifier
www.irf.com
(310) 252-7105
IGBT
A-Series
Insulated gate bipolar transistors (IGBTs) that match European nameplate ratings and package sizes; module consists of one IGBT or two IGBTs in half-bridge configuration; 1200-V dual devices are rated 100 to 600 A; single device rated 400 to 600 A Ranges from $55 to $133 each for samples; eight weeks Powerex Inc.
www.pwrx.com
(800) 451-1415
DIODES
TYPE/Model Features P & A Source
IN-SERIES SWITCHING
CMPD2005S
Dual 350-V switching diodes with an in-series configuration; 200-mA maximum peak repetitive reverse current; 0.87-V maximum forward voltage drop; SOT-23 surface-mount case; available in bulk pack or 3000 pieces on a 7-in. tape and reel Starts at $0.20 each on a 3000-piece reel; stock to four weeks Central Semiconductor Corp.
www.centralsemi.com
(631) 435-1110
ZENER
BZX584C-02 Series
Zener diode series in the ultra-small SOD 523 (SC79) plastic package; 1.2 by 0.8 mm with a 0.6-mm height profile; rated for 2.4- to 15-V voltage range; 200-mW power dissipation; low thermal resistance of 600 kO/W; tape and reel packaging $0.032 each in 100,000-unit lots; eight to 10 weeks Vishay Intertechnology Inc.
www.vishay.com
(610) 644-1300
SCHOTTKY
FST8320/FST84100
80-A Schottky diode family; compact TO-247 package; version (8320) with low forward voltage drop (430 mV) is rated at 20 V; version (84100) with low reverse leakage is rated at 100 V; devices also are available in voltage ranges from 15 to 180 V upon request $2.25 (8320) and $2.50 (84100) each in 5000-unit lots; six to eight weeks Microsemi Corp.
www.microsemi.com
(800) 713-4113
SiC SCHOTTKY
Zero Recovery
Silicon-carbide (SiC) Schottky diodes; D2, D3, TO-220, TO-247, SOT-227, and hermetic TO-257, TO-254, and TO-258 packages; 600- and 1200-V breakdown voltages; single discrete, multidie discrete, and center-tap devices; up to 500-kHz switching speeds Starts at $6.00 each in 1000-unit lots; four weeks and up Advanced Power Technology
www.advancedpower.com
(800) 522-0809
GaAs SCHOTTKY
GSS08DI25104
Small-outline gallium-arsenide (GaAs) Schottky diode; 4-A diode pair allows series and parallel configurations; VRPM rating of 250 V; SOIC-8 plastic package; can be used into the 500-MHz range $6.73 each in 1000-unit lots; stock IXYS RF
www.ixysrf.com
(970) 493-1901


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