SESDs Attack Complex ESD, Surge-Protection Challenges

SESDs Attack Complex ESD, Surge-Protection Challenges

IEC 61000-4-2-compliant electrostatic-discharge (ESD) protection can be tough to meet when guarding against severe charged board events (CBEs). TE Connectivity’s Circuit Protection group addressed the problem by developing a family of silicon ESD (SESD) devices with ±20-kV contact and ±22-kV air discharge ratings, which surpass the IEC’s 8-kV and 15-kV standards. The SESDs come in both unidirectional and bidirectional configurations with one, two, and four channels. Surge capability is 2.2 A for a four-channel array and 2.5 A for one- and two-channel devices. Packaging are standard flow-through in 0201 and 0402 sizes. Input capacitance of 0.15 pF (bidirectional) and 0.30 pF (unidirectional) at the high-frequency spectrum helps meet USB, HDMI, eSATA, and other high-speed signal requirements. Clamping voltage of less than 15 V facilitates fast turn-on time and minimizes energy let-through to sensitive downstream chipsets. In addition, the SESDs’ 50-nA leakage current helps reduce power consumption.

TE CONNECTIVITY

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