Small-Signal MOSFET Transistors Pushes On-Resistance Below 100 mΩ

Small-Signal MOSFET Transistors Pushes On-Resistance Below 100 mΩ

New MOSFET transistors come packaged in a land grid array (LGA) that reduces board space by up to 40% when compared with chip-scale packaging, according to Texas Instruments. The LGA packages for TI’s FemtoFET series, which consists of three N-channel and three P-channel devices, measure 0.6 by 1.0 by 0.35 mm. The CSD17381F4 and CSD25481F4 transistors offer on-resistance below 100 mΩ, which is 70% lower than comparable devices, according to the company. All FemtoFETs provides electrostatic discharge (ESD) protection greater than 4000 V human body model (HBM). Continuous drain current values range from 1.5 to 3.1 A.  Applications include space-constrained handhelds, such as smartphones and tablets.

TEXAS INSTRUMENTS INC.

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