Electronic Design
Ultra-Small MOSFET Transistors Feature Low On-Resistance

Ultra-Small MOSFET Transistors Feature Low On-Resistance

N-channel and P-channel FemtoFET MOSFET transistors feature ultra-small packaging and low on-resistance for space-constrained handheld applications.

Three N-channel and three P-channel FemtoFET MOSFETS from TI boast being the industry’s smallest, low on-resistance MOSFETS for space-constrained handheld applications, such as smartphones and tablets. The CSD17381F4 and CSD25481F4 FemtoFET MOSFET transistors feature ultra-small packaging and on-resistance below 100 mΩ, providing power savings and longer battery life. All FemtoFET MOSFETS provide ESD protection greater than 4,000 V human body model, and continuous drain current values ranging from 1.5 A to 3.1 A provide more than double the performance compared to similar size devices on the market today. Measuring 0.6 x 1.0 x 0.35 mm, the FemtoFET LGA packages are 40% smaller than standard chip scale packaging. The FemtoFET MOSFET transistors join TI’s portfolio of NexFET power MOSFETS that includes the CSD25213W10 P-channel and CSD13303W1015 N-channel devices for portable applications. Available in volume now, the FemtoFET MOSFETs range in price from $0.06 each/1,000 for the CSD17483F4, to $0.10 each/1,000 for the CSD17381F4.

TEXAS INSTRUMENTS INC.

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