Electronic Design

WBG Power Transistors Push the High-Power Envelope (.PDF Download)

Early predictions of widespread dominance were somewhat premature, but over the next several years, wide-bandgap (WBG) devices using gallium-nitride-on-silicon (GaN on Si) and silcon-carbide (SiC) process technologies are expected to gradually replace traditional Si MOSFETs in many power applications. Transistors made with another WBG semiconductor—carbon in the form of synthetic diamond— hold even more promise, but production is still several years away...

Regis

Register to view the full article

By registering on Electronic Design now, you'll not only gain access to premium content, you'll also become part of an exclusive, robust global engineering community!
Participate in Expert and Reader driven Q&A's
Start your own conversation by commenting on any article or blog
Download high-quality content including the highly anticipated Salary & Career Report