16 Mb Asynchronous SRAM Includes On-Chip Error-Correcting Code

16 Mb Asynchronous SRAM Includes On-Chip Error-Correcting Code

16 Mb Fast Asynchronous SRAM with on-chip ECC is designed to achieve the highest levels of data reliability without the need for additional error correction chips.

Cypress’ new 16-Mbit Fast Asynchronous SRAM with on-chip error-correcting code (ECC) is designed to achieve the highest levels of data reliability, without the need for additional error correction chips. The device touts best-in-class soft error rate performance, ensuring data reliability in a variety of industrial, military, communication, data processing, medical, consumer and automotive applications. Also available is a new Fast SRAM with PowerSnooze family that combines the 10-ns access times of Fast SRAMs with low standby power comparable to that of the MoBL family. PowerSnooze is an additional power-saving Deep Sleep mode that achieves 12 uA (typical) deep-sleep current for a 16 Mb SRAM. The 16 Mb Fast SRAM with PowerSnooze also offers the on-chip ECC. Offered in x8, x16 and x32 configurations, the Asynchronous SRAMs operate at 1.8 V, 3 V and 5 V over -40°C to +85°C (Industrial) and -40°C to +125°C (Automotive-E) temperature ranges. Available in RoHS compliant 48-pin TSOP I, 48-ball VFBGA, 119-ball BGA and 54-pin TSOP II packages, the 16 Mb Fast Asynchronous SRAM and the 16 Mb Fast Asynchronous SRAM with PowerSnooze are currently sampling, with production expected in July.

CYPRESS SEMICONDUCTOR CORPORATION

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