Electronic Design
High-Speed CMOS DDR3 SDRAMs Offer 1, 2 And 4 Gb Densities

High-Speed CMOS DDR3 SDRAMs Offer 1, 2 And 4 Gb Densities

CMOS DDR3 (+1.5 V) and DDR3L (+1.35 V) SDRAMs offer transfer rates of up to 1600 Mbps/pin and clock rates of 800 MHz.

Alliance Memory’s new line of high-speed CMOS double data rate 3 synchronous DRAMs (DDR3 SDRAM) and low-voltage DDR3L SDRAMs have densities of 1, 2 and 4 Gb in 78-ball 9 x 10.5 x 1.2 mm and 96-ball 9 x 13 x 1.2 mm FBGA packages. With their double data rate architecture, the devices offer transfer rates of up to 1600 Mbps/pin and clock rates of 800 MHz. With minimal die shrinks, the DDR3 (+1.5-V) and DDR3L (+1.35 V) SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions used in conjunction with newer-generation microprocessors for industrial, consumer, and telecom applications. The devices are offered with a commercial temperature range of 0°C to +95°C and an industrial temperature range of -40°C to +95°C. Internally configured as eight banks of 64 M, 128 M, 256 M, and 512 M x 8 bits and/or 16 bits, the devices offer fully synchronous operation and provide programmable read or write burst lengths of 4 or 8. Samples of the new DDR3 and DDR3L SDRAMs are available now, with lead times of six to eight weeks for production quantities. Pricing starts at $2.00 each/1,000.

ALLIANCE MEMORY INC.

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