Using firm's proprietary HMIC process that allows two large bond pads to be symmetrically located on the chip's surface near the edges without adding a large parasitic capacitance, MA4PBS101, MA4BPS201 and MA4BPS301 offset PIN diodes contain a single shunt silicon PIN diode embedded in a glass substrate. The diodes are designed for use as general-purpose PIN elements in switches and switched pad attenuators. They are also used in phased array radar applications. The large bond pads support multiple wire bonds, with the devices featuring silicon nitride passivation, polyimide scratch protection, and lower RC product than conventional PIN chips.
Company: M/A-COM - Division of AMP INC.
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