To meet the increasing demand for higher-performance memory products for applications like PC gaming, servers, super computing, and high-definition television, Micron Technology has introduced a 1-Gbit double-date-rate (DDR) 3 device. The DDR3 memory is faster, uses less power, and as higher memory density than previous generations. It supports data rates of 800 megtransfers per second (MT/s) to 1600 MT/s with clock frequencies of 400 MHz to 800 MHz, respectively, double the speed of DDR2 technology. The DDR3 supply voltage drops to 1.5 V, compared to 1.8 V, reducing power consumption by up to 30%. The new device is manufactured on Micron's 78-nm process.
The 1-Gbit memories will be available in x4, x8, and x16 output configurations and will comply with the latest JEDEC DDR3 specifications. They will support module densities from 512 Mbytes to 4 Gbytes and a variety of types, including FBDIMMs, UDIMMs, SODIMMs, and RDIMMs. Samples of the 1-Gbit DDR3 components are available now to select customers. Production is expected to begin early next year. A 2-Gbit DDR3 device is also expected to be available early next year. To learn more visit www.micron.com.