Two N-channel power MOSFETs are based on a 0.35-µm process. The HAT2164H is optimized for low on-resistance, and the HAT2165H targets high-speed applications. Both 30-W transistors enable the design of smaller, more efficient dc-dc converter switching power supplies. They have 4.5-V drive capability at a maximum drain-source breakdown voltage of 30 V. The 60-A HAT2164H has a typical on-resistance of 3.0 mΩ, about 40% lower than that of the previous-generation HAT2099H device. The 55-A HAT2165H MOSFET has a figure of merit (FOM) of 37 mΩ·nC, about 45% less than that of earlier devices. Both parts are shipped in a 5.3- by 6.2- by 1.1-mm, surface-mount LFPAK package with gold bumps instead of wire bonds for gate and source lead connections. In 2500-unit quantities, the HAT2164H and HAT2165H cost $1.90 each.
Hitachi Semiconductor (America) Inc.
www.hitachi.com/semiconductor; (408) 433-1990