The fruit of five years of research and development, the company announces the successful development of what it calls a revolutionary gallium nitride (GaN)-based power device technology platform that can provide significant improvements in key application-specific figures of merit up to a factor of 10 when compared to state-of-the-art silicon-based technology platforms. The platform promises to dramatically increase performance and cut energy consumption in a variety of markets such as computing, communications, automotive, and appliances. Based on the company’s proprietary GaN-on-silicon epitaxial technology, the new high throughput, 150-mm GaN-on-Si epitaxy platform, together with subsequent device fabrication processes which are fully compatible with the company’s silicon manufacturing facilities, offers users a commercially viable manufacturing platform for GaN-based power devices. Prototypes of the GaN-based product platforms will be available at the Electronica tradeshow in Munich, November 11 to 14. For more information, contact Graham Robertson at INTERNATIONAL RECTIFIER, El Segundo, CA. (310) 529-0321.
Company: INTERNATIONAL RECTIFIER
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