Ion Optics of Waltham, Mass., and NASA's Jet Propulsion Laboratory in Pasadena, Calif., have some good news for tuned-band IR emitter research. Their joint efforts have demonstrated that lithographically defined surface structures on silicon can produce distinct "tuned" emission spectra directly related to the surface feature dimensions.
By measuring the emission and reflectance of several patterned silicon surfaces, Ion Optics has determined that the peak absorbance wavelength and linewidth correlate with feature size and spacing, as well as with surface conductivity.
With greater output energy than infrared (IR) light-emitting diodes (LEDs) and the potential for comparable peak half-widths, this work could lead to a new class of tuned-band IR emitters. This ability to design and manufacture low-cost, higher-power tuned-band emitters at any specific wavelength in the IR range, from 2 to 20 µm, also could provide improved measurement sensitivities to non-dispersive infrared (NDIR) gas and chemical sensor manufacturers. Applications that involve air-quality monitoring, toxic or combustible gas detection, and combustion-emissions monitoring can utilize these developments to improve their performance.
For more information, contact Ion Optics at (781) 788-8777, or go to www.ion-optics.com.