Targeting electric vehicle applications, these two new 85V rated, high-power MOSFETs have power dissipation ratings up to 560W and are made from a single die. The IXF_80N085 HiPerFET is rated at 80A and 300W at a case temperature of 25°C and has an on-resistance of less than 9 milliohms. It is available in either a TO-247 through-hole or TO-268 SMT package. The IXF_180N085 has a power dissipation rating of 560W and its maximum on-resistance is 6 milliohms. Both devices incorporate the company's HiPerFET process, which is claimed to provide high avalanche energy capability, high current transconductance for high peak current capability, and reduced reverse recovery switching time of the body diode. Depending on the package requested, pricing for the devices ranges from $8.85 to $12.99 each/1,000.
Company: IXYS CORP.
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